onsemi NVMFS6B05NLT1G is a NVMFS6B05NLT1G from onsemi, part of the MOSFETs. It is designed for 100V 114A 5.6mΩ@20A,10V 3V@250uA 1PCSNChannel DFN-5(5x6)(SO-8FL) MOSFETs ROHS. This product comes in a DFN-5(5x6)(SO-8FL) package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 114A
- Power Dissipation (Pd): 3.8W;165W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.6mΩ@20A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.98nF@25V
- Total Gate Charge (Qg@Vgs): 6.8nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NVMFS6B05NLT1G
Full Specifications of NVMFS6B05NLT1G
| Model Number | NVMFS6B05NLT1G |
| Model Name | onsemi NVMFS6B05NLT1G |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 100V 114A 5.6mΩ@20A,10V 3V@250uA 1PCSNChannel DFN-5(5x6)(SO-8FL) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | DFN-5(5x6)(SO-8FL) |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 114A |
| Power Dissipation (Pd) | 3.8W;165W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.6mΩ@20A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 3.98nF@25V |
| Total Gate Charge (Qg@Vgs) | 6.8nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |