NVMFS6B75NLT1G by onsemi – Specifications

onsemi NVMFS6B75NLT1G is a NVMFS6B75NLT1G from onsemi, part of the MOSFETs. It is designed for 100V 28A 24.7mΩ@10V,10A 56W 3V@250uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS. This product comes in a DFN-5(5.9x4.9) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 28A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 24.7mΩ@10V,10A
  • Power Dissipation (Pd): 56W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 20pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 740pF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of NVMFS6B75NLT1G

Model NumberNVMFS6B75NLT1G
Model Nameonsemi NVMFS6B75NLT1G
CategoryMOSFETs
Brandonsemi
Description100V 28A 24.7mΩ@10V,10A 56W 3V@250uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDFN-5(5.9x4.9)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)28A
Drain Source On Resistance (RDS(on)@Vgs,Id)24.7mΩ@10V,10A
Power Dissipation (Pd)56W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)20pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)740pF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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