NVMTSC4D3N15MC by onsemi – Specifications

onsemi NVMTSC4D3N15MC is a NVMTSC4D3N15MC from onsemi, part of the MOSFETs. It is designed for 150V 4.45mΩ@95A,10V 4.5V@521uA 1PCSNChannel TDFN-8-W(8.3x8.4) MOSFETs ROHS. This product comes in a TDFN-8-W(8.3x8.4) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 23A;165A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.45mΩ@95A,10V
  • Power Dissipation (Pd): 5W;292W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@521uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.514nF@75V
  • Total Gate Charge (Qg@Vgs): 79nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of NVMTSC4D3N15MC

Model NumberNVMTSC4D3N15MC
Model Nameonsemi NVMTSC4D3N15MC
CategoryMOSFETs
Brandonsemi
Description150V 4.45mΩ@95A,10V 4.5V@521uA 1PCSNChannel TDFN-8-W(8.3x8.4) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDFN-8-W(8.3x8.4)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)23A;165A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.45mΩ@95A,10V
Power Dissipation (Pd)5W;292W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@521uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.514nF@75V
Total Gate Charge (Qg@Vgs)79nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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