NVMYS1D3N04CTWG by onsemi – Specifications

onsemi NVMYS1D3N04CTWG is a NVMYS1D3N04CTWG from onsemi, part of the MOSFETs. It is designed for 40V 1.15mΩ@50A,10V 3.5V@180uA 1PCSNChannel LFPAK-4(5x6) MOSFETs ROHS. This product comes in a LFPAK-4(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 43A;252A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.15mΩ@50A,10V
  • Power Dissipation (Pd): 3.9W;134W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@180uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.855nF@25V
  • Total Gate Charge (Qg@Vgs): 75nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.111 grams.

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Full Specifications of NVMYS1D3N04CTWG

Model NumberNVMYS1D3N04CTWG
Model Nameonsemi NVMYS1D3N04CTWG
CategoryMOSFETs
Brandonsemi
Description40V 1.15mΩ@50A,10V 3.5V@180uA 1PCSNChannel LFPAK-4(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.111 grams / 0.003915 oz
Package / CaseLFPAK-4(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)43A;252A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.15mΩ@50A,10V
Power Dissipation (Pd)3.9W;134W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@180uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.855nF@25V
Total Gate Charge (Qg@Vgs)75nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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