NVTFWS014P04M8LTAG by onsemi – Specifications

onsemi NVTFWS014P04M8LTAG is a NVTFWS014P04M8LTAG from onsemi, part of the MOSFETs. It is designed for 40V 10mΩ@10V,15A 2.4V@420uA 1PCSPChannel WDFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a WDFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 11.3A;49A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,15A
  • Power Dissipation (Pd): 3.2W;61W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@420uA
  • Reverse Transfer Capacitance (Crss@Vds): 32pF@20V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.734nF@20V
  • Total Gate Charge (Qg@Vgs): 26.5nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.07 grams.

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Full Specifications of NVTFWS014P04M8LTAG

Model NumberNVTFWS014P04M8LTAG
Model Nameonsemi NVTFWS014P04M8LTAG
CategoryMOSFETs
Brandonsemi
Description40V 10mΩ@10V,15A 2.4V@420uA 1PCSPChannel WDFN-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.070 grams / 0.002469 oz
Package / CaseWDFN-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)11.3A;49A
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@10V,15A
Power Dissipation (Pd)3.2W;61W
Gate Threshold Voltage (Vgs(th)@Id)2.4V@420uA
Reverse Transfer Capacitance (Crss@Vds)32pF@20V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.734nF@20V
Total Gate Charge (Qg@Vgs)26.5nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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