onsemi NVTYS003N03CLTWG is a NVTYS003N03CLTWG from onsemi, part of the MOSFETs. It is designed for 30V 3.6mΩ@30A,10V 2.2V@250uA 1PCSNChannel LFPAK-8 MOSFETs ROHS. This product comes in a LFPAK-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 23A;98A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.6mΩ@30A,10V
- Power Dissipation (Pd): 3W;59W
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.87nF@15V
- Total Gate Charge (Qg@Vgs): 26nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NVTYS003N03CLTWG
Full Specifications of NVTYS003N03CLTWG
Model Number | NVTYS003N03CLTWG |
Model Name | onsemi NVTYS003N03CLTWG |
Category | MOSFETs |
Brand | onsemi |
Description | 30V 3.6mΩ@30A,10V 2.2V@250uA 1PCSNChannel LFPAK-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | LFPAK-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 23A;98A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.6mΩ@30A,10V |
Power Dissipation (Pd) | 3W;59W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.2V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.87nF@15V |
Total Gate Charge (Qg@Vgs) | 26nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |