NVTYS029N08HTWG by onsemi – Specifications

onsemi NVTYS029N08HTWG is a NVTYS029N08HTWG from onsemi, part of the MOSFETs. It is designed for 80V 32.4mΩ@5A,10V 4V@20uA 1PCSNChannel LFPAK-8 MOSFETs ROHS. This product comes in a LFPAK-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 6.4A;21A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 32.4mΩ@5A,10V
  • Power Dissipation (Pd): 3.1W;33W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@20uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 369pF@40V
  • Total Gate Charge (Qg@Vgs): 6.3nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of NVTYS029N08HTWG

Model NumberNVTYS029N08HTWG
Model Nameonsemi NVTYS029N08HTWG
CategoryMOSFETs
Brandonsemi
Description80V 32.4mΩ@5A,10V 4V@20uA 1PCSNChannel LFPAK-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseLFPAK-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)6.4A;21A
Drain Source On Resistance (RDS(on)@Vgs,Id)32.4mΩ@5A,10V
Power Dissipation (Pd)3.1W;33W
Gate Threshold Voltage (Vgs(th)@Id)4V@20uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)369pF@40V
Total Gate Charge (Qg@Vgs)6.3nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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