NXH010P120MNF1PTNG by onsemi – Specifications

onsemi NXH010P120MNF1PTNG is a NXH010P120MNF1PTNG from onsemi, part of the MOSFETs. It is designed for 1.2kV 114A 250W 14mΩ@100A,20V 4.3V@40mA 2 N-Channel - MOSFETs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Drain Source Voltage (Vdss): 1.2kV
  • Continuous Drain Current (Id): 114A
  • Power Dissipation (Pd): 250W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@100A,20V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.3V@40mA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 4.707nF@800V
  • Total Gate Charge (Qg@Vgs): 454nC@20V
  • Operating Temperature: -40℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.494 grams.

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Full Specifications of NXH010P120MNF1PTNG

Model NumberNXH010P120MNF1PTNG
Model Nameonsemi NXH010P120MNF1PTNG
CategoryMOSFETs
Brandonsemi
Description1.2kV 114A 250W 14mΩ@100A,20V 4.3V@40mA 2 N-Channel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.494 grams / 0.017425 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)1.2kV
Continuous Drain Current (Id)114A
Power Dissipation (Pd)250W
Drain Source On Resistance (RDS(on)@Vgs,Id)14mΩ@100A,20V
Gate Threshold Voltage (Vgs(th)@Id)4.3V@40mA
Type2 N-Channel
Input Capacitance (Ciss@Vds)4.707nF@800V
Total Gate Charge (Qg@Vgs)454nC@20V
Operating Temperature-40℃~+175℃@(Tj)

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