onsemi SSR2N60B is a SSR2N60B from onsemi, part of the MOSFETs. It is designed for 600V 1.8A 5Ω@900mA,10V 4V@250uA 1PCSNChannel TO-252-3(DPAK) MOSFETs ROHS. This product comes in a TO-252-3(DPAK) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 1.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@900mA,10V
- Power Dissipation (Pd): 2.5W;44W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 490pF@25V
- Total Gate Charge (Qg@Vgs): 17nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SSR2N60B
Full Specifications of SSR2N60B
| Model Number | SSR2N60B |
| Model Name | onsemi SSR2N60B |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 1.8A 5Ω@900mA,10V 4V@250uA 1PCSNChannel TO-252-3(DPAK) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-252-3(DPAK) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 1.8A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5Ω@900mA,10V |
| Power Dissipation (Pd) | 2.5W;44W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 490pF@25V |
| Total Gate Charge (Qg@Vgs) | 17nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |