TIP125G by onsemi – Specifications

onsemi TIP125G is a TIP125G from onsemi, part of the Darlington Transistors. It is designed for 60V 1000@3V,3A PNP 5A 2W TO-220 Darlington Transistors ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Collector-emitter voltage (Vceo): 60V
  • DC current gain (hFE@Vce,Ic): 1000@3V,3A
  • Transistor Type: PNP
  • Collector cut-off current (Icbo@Vcb): 500uA
  • Collector Current (Ic): 5A
  • Operating Temperature: -65℃~+150℃@(Tj)
  • Power Dissipation (Pd): 2W
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@5A,20mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.

Full Specifications of TIP125G

Model NumberTIP125G
Model Nameonsemi TIP125G
CategoryDarlington Transistors
Brandonsemi
Description60V 1000@3V,3A PNP 5A 2W TO-220 Darlington Transistors ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.680 grams / 0.094534 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Collector-emitter voltage (Vceo)60V
DC current gain (hFE@Vce,Ic)1000@3V,3A
Transistor TypePNP
Transition frequency (fT)-
Collector cut-off current (Icbo@Vcb)500uA
Collector Current (Ic)5A
Operating Temperature-65℃~+150℃@(Tj)
Power Dissipation (Pd)2W
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)4V@5A,20mA

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