PSA10N65C by PIP – Specifications

PIP PSA10N65C is a PSA10N65C from PIP, part of the MOSFETs. It is designed for 650V 10A 65W 850mΩ@10V,5A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10A
  • Power Dissipation (Pd): 65W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 850mΩ@10V,5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.95 grams.

Full Specifications of PSA10N65C

Model NumberPSA10N65C
Model NamePIP PSA10N65C
CategoryMOSFETs
BrandPIP
Description650V 10A 65W 850mΩ@10V,5A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.950 grams / 0.104058 oz
Package / CaseTO-220F-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)10A
Power Dissipation (Pd)65W
Drain Source On Resistance (RDS(on)@Vgs,Id)850mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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