MMBT9013H by PJSEMI – Specifications

PJSEMI MMBT9013H is a MMBT9013H from PJSEMI, part of the Bipolar Transistors - BJT. It is designed for 30V 200mW 400@50mA,1V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 400@50mA,1V
  • Collector Current (Ic): 500mA
  • Transition Frequency (fT): 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@500mA,50mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.033 grams.

Full Specifications of MMBT9013H

Model NumberMMBT9013H
Model NamePJSEMI MMBT9013H
CategoryBipolar Transistors - BJT
BrandPJSEMI
Description30V 200mW 400@50mA,1V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.033 grams / 0.001164 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)400@50mA,1V
Collector Current (Ic)500mA
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)600mV@500mA,50mA
Transistor TypeNPN
Operating Temperature-

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