MMBTSC1623-L5 by PJSEMI – Specifications

PJSEMI MMBTSC1623-L5 is a MMBTSC1623-L5 from PJSEMI, part of the Bipolar Transistors - BJT. It is designed for 50V 200mW 270@1mA,6V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 270@1mA,6V
  • Collector Current (Ic): 100mA
  • Transition Frequency (fT): 250MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@100mA,10mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.033 grams.

Full Specifications of MMBTSC1623-L5

Model NumberMMBTSC1623-L5
Model NamePJSEMI MMBTSC1623-L5
CategoryBipolar Transistors - BJT
BrandPJSEMI
Description50V 200mW 270@1mA,6V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.033 grams / 0.001164 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)270@1mA,6V
Collector Current (Ic)100mA
Transition Frequency (fT)250MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@100mA,10mA
Transistor TypeNPN
Operating Temperature-

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