MMBTSC3875L by PJSEMI – Specifications

PJSEMI MMBTSC3875L is a MMBTSC3875L from PJSEMI, part of the Bipolar Transistors - BJT. It is designed for 50V 150mW 700@2mA,6V 150mA NPN SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE@Ic,Vce): 700@2mA,6V
  • Collector Current (Ic): 150mA
  • Transition Frequency (fT): 80MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 100mV@100mA,10mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.033 grams.

Full Specifications of MMBTSC3875L

Model NumberMMBTSC3875L
Model NamePJSEMI MMBTSC3875L
CategoryBipolar Transistors - BJT
BrandPJSEMI
Description50V 150mW 700@2mA,6V 150mA NPN SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.033 grams / 0.001164 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)150mW
DC Current Gain (hFE@Ic,Vce)700@2mA,6V
Collector Current (Ic)150mA
Transition Frequency (fT)80MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)100mV@100mA,10mA
Transistor TypeNPN
Operating Temperature-

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