2SC3356-T1B-A/AS by RENESAS – Specifications

RENESAS 2SC3356-T1B-A/AS is a 2SC3356-T1B-A/AS from RENESAS, part of the Bipolar Transistors - BJT. It is designed for 12V 200mW 125@20mA,10V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 12V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 125@20mA,10V
  • Collector Current (Ic): 100mA
  • Transition Frequency (fT): 7GHz
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.295 grams.

Full Specifications of 2SC3356-T1B-A/AS

Model Number2SC3356-T1B-A/AS
Model NameRENESAS 2SC3356-T1B-A/AS
CategoryBipolar Transistors - BJT
BrandRENESAS
Description12V 200mW 125@20mA,10V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.295 grams / 0.010406 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)12V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)125@20mA,10V
Collector Current (Ic)100mA
Transition Frequency (fT)7GHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)-
Transistor TypeNPN

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