2SA1952TLQ by ROHM Semicon – Specifications

ROHM Semicon 2SA1952TLQ is a 2SA1952TLQ from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 60V 1W 120@1A,2V 5A PNP TO-252-2(DPAK) Bipolar Transistors - BJT ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE@Ic,Vce): 120@1A,2V
  • Collector Current (Ic): 5A
  • Transition Frequency (fT): 80MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@200mA,4A
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.462 grams.

Full Specifications of 2SA1952TLQ

Model Number2SA1952TLQ
Model NameROHM Semicon 2SA1952TLQ
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description60V 1W 120@1A,2V 5A PNP TO-252-2(DPAK) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.462 grams / 0.016297 oz
Package / CaseTO-252-2(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)10uA
Collector-Emitter Breakdown Voltage (Vceo)60V
Power Dissipation (Pd)1W
DC Current Gain (hFE@Ic,Vce)120@1A,2V
Collector Current (Ic)5A
Transition Frequency (fT)80MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@200mA,4A
Transistor TypePNP

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