2SA2007E by ROHM Semicon – Specifications

ROHM Semicon 2SA2007E is a 2SA2007E from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 60V 25W 320@2A,2V 12A PNP TO-220FN Bipolar Transistors - BJT ROHS. This product comes in a TO-220FN package and is sold as Bag-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Power Dissipation (Pd): 25W
  • DC Current Gain (hFE@Ic,Vce): 320@2A,2V
  • Collector Current (Ic): 12A
  • Transition Frequency (fT): 80MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@8A,400mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of 2SA2007E

Model Number2SA2007E
Model NameROHM Semicon 2SA2007E
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description60V 25W 320@2A,2V 12A PNP TO-220FN Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220FN
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)10uA
Collector-Emitter Breakdown Voltage (Vceo)60V
Power Dissipation (Pd)25W
DC Current Gain (hFE@Ic,Vce)320@2A,2V
Collector Current (Ic)12A
Transition Frequency (fT)80MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@8A,400mA
Transistor TypePNP
Operating Temperature-

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