2SAR293PHZGT100 by ROHM Semicon – Specifications

ROHM Semicon 2SAR293PHZGT100 is a 2SAR293PHZGT100 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 500mW 270@100mA,2V 1A PNP SOT-89 Bipolar Transistors - BJT ROHS. This product comes in a SOT-89 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 500mW
  • DC Current Gain (hFE@Ic,Vce): 270@100mA,2V
  • Collector Current (Ic): 1A
  • Transition Frequency (fT): 320MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 350mV@500mA,25mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.129 grams.

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Full Specifications of 2SAR293PHZGT100

Model Number2SAR293PHZGT100
Model NameROHM Semicon 2SAR293PHZGT100
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 500mW 270@100mA,2V 1A PNP SOT-89 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.129 grams / 0.00455 oz
Package / CaseSOT-89
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)500mW
DC Current Gain (hFE@Ic,Vce)270@100mA,2V
Collector Current (Ic)1A
Transition Frequency (fT)320MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)350mV@500mA,25mA
Transistor TypePNP
Operating Temperature-

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