2SAR375P5T100Q by ROHM Semicon – Specifications

ROHM Semicon 2SAR375P5T100Q is a 2SAR375P5T100Q from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 120V 500mW 120@200mA,5V 1.5A PNP TO-243AA Bipolar Transistors - BJT ROHS. This product comes in a TO-243AA package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 120V
  • Power Dissipation (Pd): 500mW
  • DC Current Gain (hFE@Ic,Vce): 120@200mA,5V
  • Collector Current (Ic): 1.5A
  • Transition Frequency (fT): 280MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 320mV@80mA,800mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of 2SAR375P5T100Q

Model Number2SAR375P5T100Q
Model NameROHM Semicon 2SAR375P5T100Q
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description120V 500mW 120@200mA,5V 1.5A PNP TO-243AA Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-243AA
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)120V
Power Dissipation (Pd)500mW
DC Current Gain (hFE@Ic,Vce)120@200mA,5V
Collector Current (Ic)1.5A
Transition Frequency (fT)280MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)320mV@80mA,800mA

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