2SAR502E3HZGTL by ROHM Semicon – Specifications

ROHM Semicon 2SAR502E3HZGTL is a 2SAR502E3HZGTL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 150mW 200@100mA,2V 500mA PNP SC-75(SOT-416) Bipolar Transistors - BJT ROHS. This product comes in a SC-75(SOT-416) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 200nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE@Ic,Vce): 200@100mA,2V
  • Collector Current (Ic): 500mA
  • Transition Frequency (fT): 520MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@10mA,200mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of 2SAR502E3HZGTL

Model Number2SAR502E3HZGTL
Model NameROHM Semicon 2SAR502E3HZGTL
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 150mW 200@100mA,2V 500mA PNP SC-75(SOT-416) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSC-75(SOT-416)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)200nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)150mW
DC Current Gain (hFE@Ic,Vce)200@100mA,2V
Collector Current (Ic)500mA
Transition Frequency (fT)520MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@10mA,200mA

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