ROHM Semicon 2SAR512RHZGTL is a 2SAR512RHZGTL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 500mW 200@100mA,2V 2A PNP TSMT3 Bipolar Transistors - BJT ROHS. This product comes in a TSMT3 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic,Vce): 200@100mA,2V
- Collector Current (Ic): 2A
- Transition Frequency (fT): 430MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@35mA,700mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.034 grams.
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Full Specifications of 2SAR512RHZGTL
| Model Number | 2SAR512RHZGTL |
| Model Name | ROHM Semicon 2SAR512RHZGTL |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 30V 500mW 200@100mA,2V 2A PNP TSMT3 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.034 grams / 0.001199 oz |
| Package / Case | TSMT3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Power Dissipation (Pd) | 500mW |
| DC Current Gain (hFE@Ic,Vce) | 200@100mA,2V |
| Collector Current (Ic) | 2A |
| Transition Frequency (fT) | 430MHz |
| Transistor Type | PNP |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@35mA,700mA |