2SAR514PHZGT100 by ROHM Semicon – Specifications

ROHM Semicon 2SAR514PHZGT100 is a 2SAR514PHZGT100 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 80V 500mW 120@100mA,3V 700mA PNP SOT-89 Bipolar Transistors - BJT ROHS. This product comes in a SOT-89 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Power Dissipation (Pd): 500mW
  • DC Current Gain (hFE@Ic,Vce): 120@100mA,3V
  • Collector Current (Ic): 700mA
  • Transition Frequency (fT): 380MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@300mA,15mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.129 grams.

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Full Specifications of 2SAR514PHZGT100

Model Number2SAR514PHZGT100
Model NameROHM Semicon 2SAR514PHZGT100
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description80V 500mW 120@100mA,3V 700mA PNP SOT-89 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.129 grams / 0.00455 oz
Package / CaseSOT-89
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)500mW
DC Current Gain (hFE@Ic,Vce)120@100mA,3V
Collector Current (Ic)700mA
Transition Frequency (fT)380MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@300mA,15mA
Transistor TypePNP
Operating Temperature-

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