2SAR514RHZGTL by ROHM Semicon – Specifications

ROHM Semicon 2SAR514RHZGTL is a 2SAR514RHZGTL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 80V 500mW 120@100mA,3V 700mA PNP TSMT3 Bipolar Transistors - BJT ROHS. This product comes in a TSMT3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Power Dissipation (Pd): 500mW
  • DC Current Gain (hFE@Ic,Vce): 120@100mA,3V
  • Collector Current (Ic): 700mA
  • Transition Frequency (fT): 380MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@15mA,300mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.034 grams.

More on 2SAR514RHZGTL

Full Specifications of 2SAR514RHZGTL

Model Number2SAR514RHZGTL
Model NameROHM Semicon 2SAR514RHZGTL
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description80V 500mW 120@100mA,3V 700mA PNP TSMT3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.034 grams / 0.001199 oz
Package / CaseTSMT3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)500mW
DC Current Gain (hFE@Ic,Vce)120@100mA,3V
Collector Current (Ic)700mA
Transition Frequency (fT)380MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@15mA,300mA

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