2SAR522UBTL by ROHM Semicon – Specifications

ROHM Semicon 2SAR522UBTL is a 2SAR522UBTL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 20V 200mW 120@1mA,2V 200mA PNP UMT3F Bipolar Transistors - BJT ROHS. This product comes in a UMT3F package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 20V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 120@1mA,2V
  • Collector Current (Ic): 200mA
  • Transition Frequency (fT): 350MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,100mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of 2SAR522UBTL

Model Number2SAR522UBTL
Model NameROHM Semicon 2SAR522UBTL
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description20V 200mW 120@1mA,2V 200mA PNP UMT3F Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseUMT3F
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)20V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)120@1mA,2V
Collector Current (Ic)200mA
Transition Frequency (fT)350MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@10mA,100mA

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