2SAR564F3TR by ROHM Semicon – Specifications

ROHM Semicon 2SAR564F3TR is a 2SAR564F3TR from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 80V 1W 120@500mA,3V 4A PNP HUML-L3(2x2) Bipolar Transistors - BJT ROHS. This product comes in a HUML-L3(2x2) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE@Ic,Vce): 120@500mA,3V
  • Collector Current (Ic): 4A
  • Transition Frequency (fT): 220MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 360mV@2A,100mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of 2SAR564F3TR

Model Number2SAR564F3TR
Model NameROHM Semicon 2SAR564F3TR
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description80V 1W 120@500mA,3V 4A PNP HUML-L3(2x2) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseHUML-L3(2x2)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)1W
DC Current Gain (hFE@Ic,Vce)120@500mA,3V
Collector Current (Ic)4A
Transition Frequency (fT)220MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)360mV@2A,100mA
Transistor TypePNP
Operating Temperature-

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