ROHM Semicon 2SAR567F3TR is a 2SAR567F3TR from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 120V 1W 120@100mA,5V 2.5A PNP UDFN-3-EP Bipolar Transistors - BJT ROHS. This product comes in a UDFN-3-EP package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 120V
- Power Dissipation (Pd): 1W
- DC Current Gain (hFE@Ic,Vce): 120@100mA,5V
- Collector Current (Ic): 2.5A
- Transition Frequency (fT): 220MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@80mA,800mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on 2SAR567F3TR
Full Specifications of 2SAR567F3TR
| Model Number | 2SAR567F3TR |
| Model Name | ROHM Semicon 2SAR567F3TR |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 120V 1W 120@100mA,5V 2.5A PNP UDFN-3-EP Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | UDFN-3-EP |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 120V |
| Power Dissipation (Pd) | 1W |
| DC Current Gain (hFE@Ic,Vce) | 120@100mA,5V |
| Collector Current (Ic) | 2.5A |
| Transition Frequency (fT) | 220MHz |
| Transistor Type | PNP |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@80mA,800mA |