2SAR573DFHGTL by ROHM Semicon – Specifications

ROHM Semicon 2SAR573DFHGTL is a 2SAR573DFHGTL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 10W 180@100mA,3V 3A PNP TO-252-2 Bipolar Transistors - BJT ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Power Dissipation (Pd): 10W
  • DC Current Gain (hFE@Ic,Vce): 180@100mA,3V
  • Collector Current (Ic): 3A
  • Transition Frequency (fT): 300MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@1A,50mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on 2SAR573DFHGTL

Full Specifications of 2SAR573DFHGTL

Model Number2SAR573DFHGTL
Model NameROHM Semicon 2SAR573DFHGTL
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description50V 10W 180@100mA,3V 3A PNP TO-252-2 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)10W
DC Current Gain (hFE@Ic,Vce)180@100mA,3V
Collector Current (Ic)3A
Transition Frequency (fT)300MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@1A,50mA
Transistor TypePNP
Operating Temperature-

Compare ROHM Semicon - 2SAR573DFHGTL With Other 200 Models

Related Models - 2SAR573DFHGTL Alternative

Scroll to Top