2SAR582D3TL1 by ROHM Semicon – Specifications

ROHM Semicon 2SAR582D3TL1 is a 2SAR582D3TL1 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 10W 200@1A,3V 10A PNP TO-252 Bipolar Transistors - BJT ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 10W
  • DC Current Gain (hFE@Ic,Vce): 200@1A,3V
  • Collector Current (Ic): 10A
  • Transition Frequency (fT): 230MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@4A,200mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on 2SAR582D3TL1

Full Specifications of 2SAR582D3TL1

Model Number2SAR582D3TL1
Model NameROHM Semicon 2SAR582D3TL1
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 10W 200@1A,3V 10A PNP TO-252 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)10W
DC Current Gain (hFE@Ic,Vce)200@1A,3V
Collector Current (Ic)10A
Transition Frequency (fT)230MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@4A,200mA
Transistor TypePNP
Operating Temperature-

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