2SARA41CHZGT116R by ROHM Semicon – Specifications

ROHM Semicon 2SARA41CHZGT116R is a 2SARA41CHZGT116R from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 120V 200mW 180@2mA,6V 50mA PNP TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS. This product comes in a TO-236-3(SOT-23-3) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 120V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 180@2mA,6V
  • Collector Current (Ic): 50mA
  • Transition Frequency (fT): 140MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@1mA,10mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of 2SARA41CHZGT116R

Model Number2SARA41CHZGT116R
Model NameROHM Semicon 2SARA41CHZGT116R
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description120V 200mW 180@2mA,6V 50mA PNP TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-236-3(SOT-23-3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)500nA
Collector-Emitter Breakdown Voltage (Vceo)120V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)180@2mA,6V
Collector Current (Ic)50mA
Transition Frequency (fT)140MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@1mA,10mA

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