2SB1132FD5T100R by ROHM Semicon – Specifications

ROHM Semicon 2SB1132FD5T100R is a 2SB1132FD5T100R from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 32V 2W 180@100mA,3V 1A PNP SOT-89-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-89-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 32V
  • Power Dissipation (Pd): 2W
  • DC Current Gain (hFE@Ic,Vce): 180@100mA,3V
  • Collector Current (Ic): 1A
  • Transition Frequency (fT): 150MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@500mA,50mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.132 grams.

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Full Specifications of 2SB1132FD5T100R

Model Number2SB1132FD5T100R
Model NameROHM Semicon 2SB1132FD5T100R
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description32V 2W 180@100mA,3V 1A PNP SOT-89-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.132 grams / 0.004656 oz
Package / CaseSOT-89-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)500nA
Collector-Emitter Breakdown Voltage (Vceo)32V
Power Dissipation (Pd)2W
DC Current Gain (hFE@Ic,Vce)180@100mA,3V
Collector Current (Ic)1A
Transition Frequency (fT)150MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@500mA,50mA
Transistor TypePNP
Operating Temperature-

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