2SB1181 by ROHM Semicon – Specifications

ROHM Semicon 2SB1181 is a 2SB1181 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 80V 10W 1A PNP TO-252-2(DPAK) Bipolar Transistors - BJT ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Power Dissipation (Pd): 10W
  • Collector Current (Ic): 1A
  • Transition Frequency (fT): 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@1A,50mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.462 grams.

Full Specifications of 2SB1181

Model Number2SB1181
Model NameROHM Semicon 2SB1181
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description80V 10W 1A PNP TO-252-2(DPAK) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.462 grams / 0.016297 oz
Package / CaseTO-252-2(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)10W
Collector Current (Ic)1A
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@1A,50mA
Transistor TypePNP
Operating Temperature-

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