2SB1184TLQ by ROHM Semicon – Specifications

ROHM Semicon 2SB1184TLQ is a 2SB1184TLQ from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 60V 1W 120@500mA,3V 3A PNP TO-252 Bipolar Transistors - BJT ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE@Ic,Vce): 120@500mA,3V
  • Collector Current (Ic): 3A
  • Transition Frequency (fT): 70MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@2A,200mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.228 grams.

Full Specifications of 2SB1184TLQ

Model Number2SB1184TLQ
Model NameROHM Semicon 2SB1184TLQ
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description60V 1W 120@500mA,3V 3A PNP TO-252 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.228 grams / 0.008042 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)60V
Power Dissipation (Pd)1W
DC Current Gain (hFE@Ic,Vce)120@500mA,3V
Collector Current (Ic)3A
Transition Frequency (fT)70MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@2A,200mA
Transistor TypePNP
Operating Temperature-

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