ROHM Semicon 2SB1188T100R is a 2SB1188T100R from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 32V 2W 180@500mA,3V 2A PNP SOT-89-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-89-3 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 32V
- Power Dissipation (Pd): 2W
- DC Current Gain (hFE@Ic,Vce): 180@500mA,3V
- Collector Current (Ic): 2A
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@2A,200mA
- Transistor Type: PNP
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.132 grams.
More on 2SB1188T100R
Full Specifications of 2SB1188T100R
| Model Number | 2SB1188T100R |
| Model Name | ROHM Semicon 2SB1188T100R |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 32V 2W 180@500mA,3V 2A PNP SOT-89-3 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.132 grams / 0.004656 oz |
| Package / Case | SOT-89-3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 32V |
| Power Dissipation (Pd) | 2W |
| DC Current Gain (hFE@Ic,Vce) | 180@500mA,3V |
| Collector Current (Ic) | 2A |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@2A,200mA |
| Transistor Type | PNP |
| Operating Temperature | - |