ROHM Semicon 2SB1260T100Q is a 2SB1260T100Q from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 80V 2W 120@100mA,3V 1A PNP SOT-89-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-89-3 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Power Dissipation (Pd): 2W
- DC Current Gain (hFE@Ic,Vce): 120@100mA,3V
- Collector Current (Ic): 1A
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@1A,50mA
- Transistor Type: PNP
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.129 grams.
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Full Specifications of 2SB1260T100Q
| Model Number | 2SB1260T100Q |
| Model Name | ROHM Semicon 2SB1260T100Q |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 80V 2W 120@100mA,3V 1A PNP SOT-89-3 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.129 grams / 0.00455 oz |
| Package / Case | SOT-89-3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Power Dissipation (Pd) | 2W |
| DC Current Gain (hFE@Ic,Vce) | 120@100mA,3V |
| Collector Current (Ic) | 1A |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@1A,50mA |
| Transistor Type | PNP |
| Operating Temperature | - |