2SB1427T100E by ROHM Semicon – Specifications

ROHM Semicon 2SB1427T100E is a 2SB1427T100E from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 20V 2W 390@500mA,6V 2A PNP TO-243AA Bipolar Transistors - BJT ROHS. This product comes in a TO-243AA package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 20V
  • Power Dissipation (Pd): 2W
  • DC Current Gain (hFE@Ic,Vce): 390@500mA,6V
  • Collector Current (Ic): 2A
  • Transition Frequency (fT): 90MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@50mA,1A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of 2SB1427T100E

Model Number2SB1427T100E
Model NameROHM Semicon 2SB1427T100E
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description20V 2W 390@500mA,6V 2A PNP TO-243AA Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-243AA
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)500nA
Collector-Emitter Breakdown Voltage (Vceo)20V
Power Dissipation (Pd)2W
DC Current Gain (hFE@Ic,Vce)390@500mA,6V
Collector Current (Ic)2A
Transition Frequency (fT)90MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@50mA,1A

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