2SB1730TL by ROHM Semicon – Specifications

ROHM Semicon 2SB1730TL is a 2SB1730TL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 12V 400mW 270@200mA,2V 2A PNP TUMT3 Bipolar Transistors - BJT ROHS. This product comes in a TUMT3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 12V
  • Power Dissipation (Pd): 400mW
  • DC Current Gain (hFE@Ic,Vce): 270@200mA,2V
  • Collector Current (Ic): 2A
  • Transition Frequency (fT): 360MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 180mV@50mA,1A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of 2SB1730TL

Model Number2SB1730TL
Model NameROHM Semicon 2SB1730TL
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description12V 400mW 270@200mA,2V 2A PNP TUMT3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTUMT3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)12V
Power Dissipation (Pd)400mW
DC Current Gain (hFE@Ic,Vce)270@200mA,2V
Collector Current (Ic)2A
Transition Frequency (fT)360MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)180mV@50mA,1A

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