2SC4617EBHZGTLR by ROHM Semicon – Specifications

ROHM Semicon 2SC4617EBHZGTLR is a 2SC4617EBHZGTLR from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 150mW 120@1mA,6V 150mA NPN SC-89(SOT-490) Bipolar Transistors - BJT ROHS. This product comes in a SC-89(SOT-490) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE@Ic,Vce): 120@1mA,6V
  • Collector Current (Ic): 150mA
  • Transition Frequency (fT): 180MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@5mA,50mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of 2SC4617EBHZGTLR

Model Number2SC4617EBHZGTLR
Model NameROHM Semicon 2SC4617EBHZGTLR
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description50V 150mW 120@1mA,6V 150mA NPN SC-89(SOT-490) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSC-89(SOT-490)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)150mW
DC Current Gain (hFE@Ic,Vce)120@1mA,6V
Collector Current (Ic)150mA
Transition Frequency (fT)180MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@5mA,50mA
Transistor TypeNPN

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