ROHM Semicon 2SC5729T106Q is a 2SC5729T106Q from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 200mW 120@50mA,2V 500mA NPN SC-70(SOT-323) Bipolar Transistors - BJT ROHS. This product comes in a SC-70(SOT-323) package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic,Vce): 120@50mA,2V
- Collector Current (Ic): 500mA
- Transition Frequency (fT): 300MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,100mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on 2SC5729T106Q
Full Specifications of 2SC5729T106Q
| Model Number | 2SC5729T106Q |
| Model Name | ROHM Semicon 2SC5729T106Q |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 30V 200mW 120@50mA,2V 500mA NPN SC-70(SOT-323) Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | SC-70(SOT-323) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Power Dissipation (Pd) | 200mW |
| DC Current Gain (hFE@Ic,Vce) | 120@50mA,2V |
| Collector Current (Ic) | 500mA |
| Transition Frequency (fT) | 300MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@10mA,100mA |
| Transistor Type | NPN |