2SC5876U3T106 by ROHM Semicon – Specifications

ROHM Semicon 2SC5876U3T106 is a 2SC5876U3T106 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 60V 200mW 120@50mA,2V 500mA NPN SC-70 Bipolar Transistors - BJT ROHS. This product comes in a SC-70 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 120@50mA,2V
  • Collector Current (Ic): 500mA
  • Transition Frequency (fT): 300MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,100mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.

More on 2SC5876U3T106

Full Specifications of 2SC5876U3T106

Model Number2SC5876U3T106
Model NameROHM Semicon 2SC5876U3T106
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description60V 200mW 120@50mA,2V 500mA NPN SC-70 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.110 grams / 0.00388 oz
Package / CaseSC-70
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)60V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)120@50mA,2V
Collector Current (Ic)500mA
Transition Frequency (fT)300MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@10mA,100mA
Transistor TypeNPN

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