2SCR502EBTL by ROHM Semicon – Specifications

ROHM Semicon 2SCR502EBTL is a 2SCR502EBTL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 150mW 200@100mA,2V 500mA NPN SOT-416 Bipolar Transistors - BJT ROHS. This product comes in a SOT-416 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 200nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE@Ic,Vce): 200@100mA,2V
  • Collector Current (Ic): 500mA
  • Transition Frequency (fT): 360MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 100mV@200mA,10mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.019 grams.

Full Specifications of 2SCR502EBTL

Model Number2SCR502EBTL
Model NameROHM Semicon 2SCR502EBTL
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 150mW 200@100mA,2V 500mA NPN SOT-416 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.019 grams / 0.00067 oz
Package / CaseSOT-416
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)200nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)150mW
DC Current Gain (hFE@Ic,Vce)200@100mA,2V
Collector Current (Ic)500mA
Transition Frequency (fT)360MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)100mV@200mA,10mA
Transistor TypeNPN
Operating Temperature-

Compare ROHM Semicon - 2SCR502EBTL With Other 200 Models

Related Models - 2SCR502EBTL Alternative

Scroll to Top