ROHM Semicon 2SCR502UBTL is a 2SCR502UBTL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 200mW 200@100mA,2V 500mA NPN SOT-323-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-323-3 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 200nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic,Vce): 200@100mA,2V
- Collector Current (Ic): 500mA
- Transition Frequency (fT): 360MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 100mV@200mA,10mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.022 grams.
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Full Specifications of 2SCR502UBTL
| Model Number | 2SCR502UBTL |
| Model Name | ROHM Semicon 2SCR502UBTL |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 30V 200mW 200@100mA,2V 500mA NPN SOT-323-3 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.022 grams / 0.000776 oz |
| Package / Case | SOT-323-3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 200nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Power Dissipation (Pd) | 200mW |
| DC Current Gain (hFE@Ic,Vce) | 200@100mA,2V |
| Collector Current (Ic) | 500mA |
| Transition Frequency (fT) | 360MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 100mV@200mA,10mA |
| Transistor Type | NPN |
| Operating Temperature | - |