2SCR512P5T100 by ROHM Semicon – Specifications

ROHM Semicon 2SCR512P5T100 is a 2SCR512P5T100 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 500mW 200@100mA,2V 2A NPN SOT-89-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-89-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 500mW
  • DC Current Gain (hFE@Ic,Vce): 200@100mA,2V
  • Collector Current (Ic): 2A
  • Transition Frequency (fT): 320MHz
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@700mA,35mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.132 grams.

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Full Specifications of 2SCR512P5T100

Model Number2SCR512P5T100
Model NameROHM Semicon 2SCR512P5T100
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 500mW 200@100mA,2V 2A NPN SOT-89-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.132 grams / 0.004656 oz
Package / CaseSOT-89-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)1uA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)500mW
DC Current Gain (hFE@Ic,Vce)200@100mA,2V
Collector Current (Ic)2A
Transition Frequency (fT)320MHz
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@700mA,35mA
Operating Temperature-

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