ROHM Semicon 2SCR514RHZGTL is a 2SCR514RHZGTL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 80V 500mW 120@100mA,3V 700mA NPN TSMT3 Bipolar Transistors - BJT ROHS. This product comes in a TSMT3 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic,Vce): 120@100mA,3V
- Collector Current (Ic): 700mA
- Transition Frequency (fT): 320MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@15mA,300mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.034 grams.
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Full Specifications of 2SCR514RHZGTL
| Model Number | 2SCR514RHZGTL |
| Model Name | ROHM Semicon 2SCR514RHZGTL |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 80V 500mW 120@100mA,3V 700mA NPN TSMT3 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.034 grams / 0.001199 oz |
| Package / Case | TSMT3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Power Dissipation (Pd) | 500mW |
| DC Current Gain (hFE@Ic,Vce) | 120@100mA,3V |
| Collector Current (Ic) | 700mA |
| Transition Frequency (fT) | 320MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@15mA,300mA |
| Transistor Type | NPN |