ROHM Semicon 2SCR522EBTL is a 2SCR522EBTL from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 20V 150mW 120@1mA,2V 200mA NPN SOT-416FL Bipolar Transistors - BJT ROHS. This product comes in a SOT-416FL package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 20V
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE@Ic,Vce): 120@1mA,2V
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 400MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@100mA,10mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of 2SCR522EBTL
| Model Number | 2SCR522EBTL |
| Model Name | ROHM Semicon 2SCR522EBTL |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 20V 150mW 120@1mA,2V 200mA NPN SOT-416FL Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | SOT-416FL |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Power Dissipation (Pd) | 150mW |
| DC Current Gain (hFE@Ic,Vce) | 120@1mA,2V |
| Collector Current (Ic) | 200mA |
| Transition Frequency (fT) | 400MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@100mA,10mA |
| Transistor Type | NPN |
| Operating Temperature | - |