2SCR542F3TR by ROHM Semicon – Specifications

ROHM Semicon 2SCR542F3TR is a 2SCR542F3TR from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 1W 200@500mA,2V 3A NPN UDFN-3-EP Bipolar Transistors - BJT ROHS. This product comes in a UDFN-3-EP package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE@Ic,Vce): 200@500mA,2V
  • Collector Current (Ic): 3A
  • Transition Frequency (fT): 250MHz
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,1A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on 2SCR542F3TR

Full Specifications of 2SCR542F3TR

Model Number2SCR542F3TR
Model NameROHM Semicon 2SCR542F3TR
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 1W 200@500mA,2V 3A NPN UDFN-3-EP Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseUDFN-3-EP
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)1W
DC Current Gain (hFE@Ic,Vce)200@500mA,2V
Collector Current (Ic)3A
Transition Frequency (fT)250MHz
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@50mA,1A

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