ROHM Semicon 2SCR587D3TL1 is a 2SCR587D3TL1 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 120V 10W 120@100mA,5V 3A NPN TO-252 Bipolar Transistors - BJT ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 120V
- Power Dissipation (Pd): 10W
- DC Current Gain (hFE@Ic,Vce): 120@100mA,5V
- Collector Current (Ic): 3A
- Transition Frequency (fT): 250MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 120mV@1A,100mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on 2SCR587D3TL1
Full Specifications of 2SCR587D3TL1
| Model Number | 2SCR587D3TL1 |
| Model Name | ROHM Semicon 2SCR587D3TL1 |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 120V 10W 120@100mA,5V 3A NPN TO-252 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 120V |
| Power Dissipation (Pd) | 10W |
| DC Current Gain (hFE@Ic,Vce) | 120@100mA,5V |
| Collector Current (Ic) | 3A |
| Transition Frequency (fT) | 250MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 120mV@1A,100mA |
| Transistor Type | NPN |
| Operating Temperature | - |