2SD1664T100P by ROHM Semicon – Specifications

ROHM Semicon 2SD1664T100P is a 2SD1664T100P from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 32V 2W 82@100mA,3V 1A NPN - Bipolar Transistors - BJT ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Collector Cut-Off Current (Icbo): 500nA
• Collector-Emitter Breakdown Voltage (Vceo): 32V
• Power Dissipation (Pd): 2W
• DC Current Gain (hFE@Ic,Vce): 82@100mA,3V
• Collector Current (Ic): 1A
• Transition Frequency (fT): 150MHz
• Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,500mA
• Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.