2SD1949T106R by ROHM Semicon – Specifications

ROHM Semicon 2SD1949T106R is a 2SD1949T106R from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 200mW 180@10mA,3V 500mA NPN SOT-323-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-323-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 180@10mA,3V
  • Collector Current (Ic): 500mA
  • Transition Frequency (fT): 250MHz
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@150mA,15mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.025 grams.

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Full Specifications of 2SD1949T106R

Model Number2SD1949T106R
Model NameROHM Semicon 2SD1949T106R
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description50V 200mW 180@10mA,3V 500mA NPN SOT-323-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.025 grams / 0.000882 oz
Package / CaseSOT-323-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)500nA
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)180@10mA,3V
Collector Current (Ic)500mA
Transition Frequency (fT)250MHz
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@150mA,15mA
Operating Temperature-

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