ROHM Semicon 2SD2351T106V is a 2SD2351T106V from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 200mW 820@1mA,5V 150mA NPN UMT-3 Bipolar Transistors - BJT ROHS. This product comes in a UMT-3 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 300nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic,Vce): 820@1mA,5V
- Collector Current (Ic): 150mA
- Transition Frequency (fT): 250MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@50mA,5mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.025 grams.
More on 2SD2351T106V
Full Specifications of 2SD2351T106V
| Model Number | 2SD2351T106V |
| Model Name | ROHM Semicon 2SD2351T106V |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 50V 200mW 820@1mA,5V 150mA NPN UMT-3 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.025 grams / 0.000882 oz |
| Package / Case | UMT-3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 300nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Power Dissipation (Pd) | 200mW |
| DC Current Gain (hFE@Ic,Vce) | 820@1mA,5V |
| Collector Current (Ic) | 150mA |
| Transition Frequency (fT) | 250MHz |
| Transistor Type | NPN |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@50mA,5mA |
| Operating Temperature | - |