2SD2657KT146 by ROHM Semicon – Specifications

ROHM Semicon 2SD2657KT146 is a 2SD2657KT146 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 200mW 270@100mA,2V 1.5A NPN TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS. This product comes in a TO-236-3(SOT-23-3) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 270@100mA,2V
  • Collector Current (Ic): 1.5A
  • Transition Frequency (fT): 330MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 160mV@1A,50mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.128 grams.

Full Specifications of 2SD2657KT146

Model Number2SD2657KT146
Model NameROHM Semicon 2SD2657KT146
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 200mW 270@100mA,2V 1.5A NPN TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.128 grams / 0.004515 oz
Package / CaseTO-236-3(SOT-23-3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)270@100mA,2V
Collector Current (Ic)1.5A
Transition Frequency (fT)330MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)160mV@1A,50mA
Transistor TypeNPN
Operating Temperature-

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